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Saturday, May 2, 2020 | History

2 edition of Room-temperature-operation visible-emission semiconductor diode lasers found in the catalog.

Room-temperature-operation visible-emission semiconductor diode lasers

I. Ladany

Room-temperature-operation visible-emission semiconductor diode lasers

by I. Ladany

  • 262 Want to read
  • 26 Currently reading

Published by National Aeronautics and Space Administration in Washington .
Written in English

    Subjects:
  • Diodes, Semiconductor.,
  • Lasers.

  • Edition Notes

    StatementI. Ladany, H. Kressel, and C. J. Nuese.
    SeriesNASA contractor report ; NASA CR-2823, NASA contractor report -- NASA CR-2823.
    ContributionsKressler, H., Nuese, C J., United States. National Aeronautics and Space Administration., RCA Laboratories.
    The Physical Object
    Paginationvii, 61 p. :
    Number of Pages61
    ID Numbers
    Open LibraryOL17535083M

    Colloidal Quantum Dots as the Active Material for Silicon Nitride Photonics Alexandria, Euclid, has also published the book called “Optics”, in around BC, which also contains the fundamental understanding of light. the same level as that of III-V semiconductor lasers epitaxially grown on silicon. 3D-Inline-Messtechnik Seyler, Tobias; Fratz, Markus; Beckmann, Tobias; Schiller, Annelie; Engler, Johannes; Bertz, Alexander; Carl, Daniel: Journal Article.

      Diode having trenches in a semiconductor region. DOEpatents. Palacios, Tomas Apostol; Lu, Bin; Matioli, Elison de Nazareth. . The capacitance voltage characteristic of the diode has a voltage intercept of about volts and an effective GaN carrier concentration of approximately 10'2/cm3. The high diode forward resistence obtained in the current voltage characteristics of about 34 kilo- Ohms is probably due to the high resistivity of the GaN layer.

    Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of eV, large exciton binding energy of 60 meV, and high optical gain of cm−1 at room temperature. Its luminescent properties have been intensively investigated for . N ove m b e r w w w. l a s e r f o c u s wo r l d.c o m Photonics Technologies & Solutions for Technical Professionals Worldwide Laser space instrumentation comes of age PAGE


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Room-temperature-operation visible-emission semiconductor diode lasers by I. Ladany Download PDF EPUB FB2

Room-temperature-operation visible-emission semiconductor diode lasers. Washington: National Aeronautics and Space Administration ; Springfield, Va.: For sale by the National Technical Information Service, Room-temperature-operation visible-emission semiconductor diode lasers (NASA contractor report ; NASA CR) [I Ladany] on *FREE* shipping on qualifying offers.

Room-temperature-operation visible-emission semiconductor diode lasers / I. Ladany, H. Kressel, and C.J.

Nuese. Buy Room-temperature-operation visible-emission semiconductor diode lasers (NASA contractor report ; NASA CR) by Ladany, I (ISBN:) from Amazon's Book Store.

Everyday low prices and free delivery on eligible : I Ladany. Two alloy systems, (AlGa)As and (InGa)P, were studied for their properties relevant to obtaining laser diode operation in the visible region of the spectrum.

(AlGa)As was prepared by liquid-phase epitaxy (LPE) and (InGa)P was prepared both by vapor-phase epitaxy and by liquid-phase epitaxy. Various. The 1. 1 micrometer and visible emission semiconductor diode lasers. Final report, 1 January - 30 November Final report, 1 January - 30 November Full Record.

Tunnel diode low-level detection / (Washington, D. C.: National Aeronautics and Space Administration ; Springfield, Va.: for sale by the Clearinghouse for Federal Scientific and Technical Information, ), by W. Gabriel, Goddard Space Flight Center, and United States National Aeronautics and Space Administration (page images at HathiTrust).

Semiconductor-diode parametric amplifiers (Englewood Cliffs, N.J., Prentice-Hall, ), by Lawrence A Blackwell and Kenneth L. Kotzebue (page images at HathiTrust) Generation of alternating current by a power diode / (Washington, D.C.: National Aeronautics and Space.

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Free-exciton recombination emission of nm in wavelength is obtained by current injection at room temperature from a diamond-based pn junction diode composed of B.

Schematic diagram of a typical semiconductor structure for electrical excitation of Er3+ ions which are incorporated in a p-i-n structure.[6°] Torvik et al.

were the first to demonstrate room temperature operation of a LED emitting at I~m based on III-V nitride semiconductors.[62]The device consisted ofa metal/i-GaN/n-GaN (m-i-n) by: 3. Search the leading research in optics and photonics applied research from SPIE journals, conference proceedings and presentations, and eBooks.

Advanced Search >. Home > Proceedings > Volume > Proceedings > Volume   Dr. Devendra K. Sadana. Manager at IBM Thomas J Watson Research Ctr.

Light emitting diodes, Graphene, Solid state lighting, Gallium nitride, Silicon carbide, Chemical lasers, Laser liftoff, Blue light emitting diodes Light emitting diodes, Polarization, Ultraviolet radiation, Luminescence, Crystals, Silicon, Semiconductor lasers. Achetez et téléchargez ebook Room-temperature-operation visible-emission semiconductor diode lasers (English Edition): Boutique Kindle - Science: at: Format Kindle.

Selected publications Grandjean N, Ilegems M Visible emission from InGaN/GaN quantum-dot materials and devices Proc. IEEE, vol. 95 (9), pp. () Butte R, Christmann G, Feltin E, Carlin JF, Mosca M, Ilegems M, Grandjean N Room-temperature polariton luminescence from a bulk GaN microcavity Phys.

Rev. B 73 (3): Art. JAN Feltin E, Carlin JF. KEYWORDS: Thermal effects, Diode pumped solid state lasers, Cryogenics, Bulk lasers, Crystals, Ytterbium, Doping, YAG lasers, Laser crystals, Thermal modeling. LIGHT-EMITTING DEVICES.

I1 75 Threshold lowering and room temperature operation being the immediate goal, much work was done to improve fl and decrease a. A first essential threshold current lowering to A/cmz was reported by Panish et al. () with their DH : Herbert F.

Mataré. Razeghi is one of the leading scientists in the field of semiconductor science and technology. She is a pioneer in the development and implementation of major modern epitaxial. Prof. Can Bayram. Assistant Prof at Univ of Illinois. SPIE Involvement: Author | Editor Area of Expertise: Photonics, III-V Materials, Next Generation Electronics, GaN-based Devices, Solid State Lighting, Heterointegrated Devices.

SPIE Digital Library Proceedings. CONFERENCE PROCEEDINGS Papers Presentations.The classical theory of electrodynamics cannot explain the existence and structure of electric and magnetic dipoles, yet it incorporates such dipoles into its fundamental equation.Mode-locked diode lasers Mode-locked fiber lasers Mode-locked solid-state lasers Model Based Controls Model- Based Vision model-based reasoning Model Modeling and Simulation Modeling,Modulation Techniques Module Moisture molding Molecular Beam Expitaxy